| 品牌：智芯科 | 型号：MT11G035B | 封装：TO-263-2L |
| 批号：2423 |
MT11G035B= 100V m =10V1&KDQQHO(QKDQFHPHQW0RGH)LHOG聡(IIHFW7UDQVLVWRU Product SummaryVDSI DR DS(ON) @VGS 聡 聡 GSSGT MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) Pb-free lead plating 聡 聡 聡 聡Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification聡 聡Package Marking and Ordering InformationDevice Marking Device Device Package Reel Size Tape width Quantity Absolute Maximum Ratings (TC=25鈩僽nless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 卤20 V Drain Current-Continuous (Package Limited) IDDrain Current-Continuous(TC=100鈩�) ID (100鈩働ulsed Drain Current IDMMaximum Power Dissipation PDSingle pulse avalanche energy (Note 5) EAS 480 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 鈩僒O-263-2LG D S50 150 掳C operating temperature .
